
The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy
Keywords: A1 میکروسکوپ نیروی اتمی; A1. Atomic force microscopy; A1. Surface structure; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds