کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792503 | 1023648 | 2010 | 5 صفحه PDF | دانلود رایگان |
Non-polar a-plane GaN film with crystalline quality and anisotropy improvement is grown by use of high temperature AlN/AlGaN buffer, which is directly deposited on r-plane sapphire by pulse flows. Compared to the a-plane GaN grown on AlN buffer, X-ray rocking curve analysis reveals a remarkable reduction in the full width at half maximum, both on-axis and off-axis. Atomic force microscopy image exhibits a fully coalesced pit-free surface morphology with low root-mean-square roughness (∼1.5 nm). Photoluminescence is carried out on the a-plane GaN grown on r-plane sapphire. It is found that, at low temperature, the dominant emission at ∼3.42 eV is composed of two separate peaks with different characteristics, which provide explanations for the controversial attributions of this peak in previous studies.
Journal: Journal of Crystal Growth - Volume 312, Issue 23, 15 November 2010, Pages 3438–3442