کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792735 | 1023656 | 2010 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (1 1 1) substrate The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (1 1 1) substrate](/preview/png/1792735.png)
The influence of Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (1 1 1) substrate by metalorganic chemical vapor deposition (MOCVD) has been systematically studied. Compared with the sample without Al pre-deposition, optimum Al pre-deposition time could improve the AlN buffer layer crystal quality and reduce the root mean square (RMS) roughness. Whereas, overlong Al-deposition time deteriorated the AlN crystal quality and Al-deposition patterns could be found. Cracks and melt-back etching patterns appeared in the GaN layer grown without Al pre-deposition. With suitable Al-deposition time, crack-free 2.0 μm GaN was obtained and the full-width at half-maximum (FWHM) of (0 0 2) plane measured by double crystal X-ray diffraction (DCXRD) was as low as 482 arcsec. However, overlong Al-deposition time would result in a great deal of cracks, and the crystal quality of GaN layer deteriorated. The surface of GaN layer became rough in the region where the Al-deposition patterns were formed due to overlong Al-deposition time.
Journal: Journal of Crystal Growth - Volume 312, Issue 14, 1 July 2010, Pages 2044–2048