کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794145 | 1023692 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of a-plane InN film grown on r-plane sapphire by MOCVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A-plane InN film has been grown on r-plane sapphire substrate by MOCVD without any buffer. X-ray Ï/2θ scan confirms that only wurtzite-type InN was grown. The in-plane orientation relationship between a-plane InN and r-plane sapphire is ã0 0 0 1ãInN//[1¯ 1 0 1]sapphire and [1¯ 1 0 0]InN//[1 1 2¯ 0]sapphire deduced from selected area diffraction. Atomic force microscopy reveals that no stripe features appear on surface of the a-plane InN film, which is different from that of a-plane GaN grown on r-plane sapphire where stripes along [0 0 0 1] direction appear on the surface. The difference originates from the different growth mode of InN and GaN. In addition, photoluminescence and absorption spectra show that our a-plane InN has a narrow band gap of 0.7 eV, which is similar to that of c-plane InN film grown by the same system.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 16, 1 August 2008, Pages 3726-3729
Journal: Journal of Crystal Growth - Volume 310, Issue 16, 1 August 2008, Pages 3726-3729
نویسندگان
X.L. Zhu, L.W. Guo, M.Z. Peng, B.H. Ge, J. Zhang, G.J. Ding, H.Q. Jia, H. Chen, J.M. Zhou,