کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795345 | 1524483 | 2007 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Island motion triggered by the growth of strain-relaxed SiGe/Si(0Â 0Â 1) islands
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Island motion triggered by the growth of strain-relaxed SiGe/Si(0Â 0Â 1) islands Island motion triggered by the growth of strain-relaxed SiGe/Si(0Â 0Â 1) islands](/preview/png/1795345.png)
چکیده انگلیسی
We investigate the footprints left over by SiGe islands epitaxially grown on Si(0 0 1) substrates at temperatures between 620 and 740 °C by using a combination of selective wet chemical etching and atomic force microscopy. Dislocated islands (superdomes) exhibit rather complex footprints consisting of circular “tree-ring” structures. A simple phenomenological model is able to describe the formation of the ring like structures. Coherently strained islands are observed to move away from the nearby superdomes preserving their shape, while coherent islands located a few tens of nanometers away from the closest superdomes do not move. The lateral island motion is triggered by the strain repulsion produced by the growing superdome and leads to an asymmetric alloying of the moving island.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 319-323
Journal: Journal of Crystal Growth - Volumes 301â302, April 2007, Pages 319-323
نویسندگان
T. Merdzhanova, A. Rastelli, M. Stoffel, S. Kiravittaya, O.G. Schmidt,