کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797119 1023769 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (1 0 0) substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (1 0 0) substrate
چکیده انگلیسی
Growth interruption during the formation of InAs quantum dots (QDs) on a GaAs (1 0 0) substrate has been investigated in detail. A total of 1.9 mono layers (MLs) of an InAs QD nucleation layer was grown continuously to form a seed with high density. Further, the supply of up to 3 MLs of InAs with a growth interruption of 15 s for every 0.11 ML showed that photoluminescence intensity was improved by 23 times and red-shifted the photoluminescence emission nearly 42 nm. The continuous growth up to 1.9 MLs helped to double the dot density. 3.3 MLs of InAs embedded in a GaAs matrix, grown using interruption showed a strong RT photoluminescence peak at around 1272 nm with a very narrow FWHM of 27.1 meV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 289, Issue 1, 15 March 2006, Pages 14-17
نویسندگان
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