Keywords: A3 نقاط کوانتومی; A3. MOVPE; A3. Quantum dots; B2. Photonic crystals; Quantum cavity electrodynamics; Quantum dot lasers
مقالات ISI A3 نقاط کوانتومی (ترجمه نشده)
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Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si
Keywords: A3 نقاط کوانتومی; A1. Defects; A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B2. Semiconducting III-V materials;
Emission wavelength control of ordered arrays of InGaAs/GaAs quantum dots
Keywords: A3 نقاط کوانتومی; A1. Nanostructures; A3. Metalorganic vapor phase epitaxy; A3. Non planar growth; A3. Quantum dots; B2. Semiconducting III-V materials; B2. Indium Gallium Arsenide;
Annealing effect of the InAs dot-in-well structure grown by MBE
Keywords: A3 نقاط کوانتومی; A1. Photoluminescence; A3. Quantum dots; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials; B3. Heterojunction semiconductor devices;
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique
Keywords: A3 نقاط کوانتومی; A1. Atomic force microscopy; A1. Photoluminescence; A3. Quantum dots; A3. Metalorganic chemical vapor deposition; B2. Semiconducting quarternary alloys
Suppression of photoluminescence from wetting layer of InAs quantum dots grown on (311)B GaAs with AlAs cap
Keywords: A3 نقاط کوانتومی; A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum dots; B2. (311)B GaAs; B2. AlAs cap;
Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates
Keywords: A3 نقاط کوانتومی; A1. GaAs anti-phase domain; A1. Ge substrates; A3. Quantum dots; A3. GaSb;
GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm
Keywords: A3 نقاط کوانتومی; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Nanomaterials; B2. Semiconducting III-V materials; B3. Laser diodes;
Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by metal-organic chemical vapor deposition
Keywords: A3 نقاط کوانتومی; A3. Quantum dots; A3. Metalorganic chemical vapor deposition; B2. InP; B3. Laser diodes
InGaAs quantum dots embedded in DBR-coupled double cavity
Keywords: A3 نقاط کوانتومی; A3. Molecular beam epitaxy; A3. Quantum dots; B1. InGaAs; B3. Distributed Bragg reflectors; B3. Terahertz wave generators;
Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 μm with low optical degradation
Keywords: A3 نقاط کوانتومی; A1. Crystal morphology; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III-V materials; B3. Light emitting diodes;
Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices
Keywords: A3 نقاط کوانتومی; A1. Nanostructures; A3. Quantum dots; A2. Site-controlled growth; B2. Semiconducting III-V materials;
Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy
Keywords: A3 نقاط کوانتومی; A1. Reflection high-energy electron diffraction; A1. Atomic force microscopy; A3. Quantum dots; A3. Molecular beam epitaxy; B2. Semiconducting III-V materials;
Electroluminescence from InGaN quantum dots in a fully monolithic GaN/AlInN cavity
Keywords: A3 نقاط کوانتومی; A1. Electroluminescence; A3. MOVPE; A3. Quantum dots; B2. InGaN; B2. AlInN; B3. Single photon emitter
Pulsed single-photon resonant-cavity quantum dot LED
Keywords: A3 نقاط کوانتومی; A1. Characterization; A3. MOVPE; A3. Quantum dots; B2. Semiconducting indium phosphide; B3. Light emitting diodes
Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 μm using aberration-corrected scanning transmission electron microscopy
Keywords: A3 نقاط کوانتومی; A1. Characterisation; A1. Nanostructures; A1. Scanning transmission electron microscopy; A3. Metalorganic vapour-phase epitaxy; A3. Quantum dots; B2. Semiconducting III/V materials
InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation
Keywords: A3 نقاط کوانتومی; A1. Scanning electron microscopy; A1. Quantum dot density variation; A3. Molecular beam epitaxy; A3. Quantum dots; B1. InAs/GaAs; B2. Semiconducting III-V materials;
Single step synthesis of CdSeS nanorods with chemical composition gradients
Keywords: A3 نقاط کوانتومی; A3. Quantum dots; B1. Nanorods; B2. CdS; B2. CdSe
Morphology and stress evolution of InAs QD grown and annealed in-situ at high temperature
Keywords: A3 نقاط کوانتومی; A1. Nanostructures; A1. Mass transfer; A1. Ripening; A3. Molecular beam epitaxy; A3. Quantum dots;
Growth of EuTe islands on SnTe by molecular beam epitaxy
Keywords: A3 نقاط کوانتومی; A1. Atomic force microscopy; A1. X-ray diffraction; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting materials
Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates
Keywords: A3 نقاط کوانتومی; 81.15.Hi; 81.16.Dn; 81.07.Ta; 61.14.Hg; 64.75.+gA1. Reflection high-energy electron diffraction; A3. Molecular beam epitaxy; A3. Quantum dots
Lateral variations in self-assembled InGaAs quantum dot distributions
Keywords: A3 نقاط کوانتومی; 68.65.Hb; 81.15.Hi; 81.05.EaA1. Atomic force microscopy; A1. Nanostructures; A1. Self-assembly; A3. Molecular beam epitaxy; A3. Quantum dots; B1. InAs/GaAs
Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE
Keywords: A3 نقاط کوانتومی; A1. Characterization; A3. MOVPE; A3. Quantum dots; B2. Semiconducting indium arsenide; B2. Semiconducting indium phosphide;
InAs/InP QDs with GaxIn1âxAs cap layer by a double-cap procedure using MOVPE selective area growth
Keywords: A3 نقاط کوانتومی; A3. Metalorganic vapor phase epitaxy; A3. Quantum dots; A3. Selective epitaxy; B2. InAs/InP; B2. Semiconducting III-V materials;
Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature
Keywords: A3 نقاط کوانتومی; A1. Characterization; A3. MOVPE; A3. Quantum dots; B2. Semiconducting indium phosphide; B3. Light emitting diodes;
Optimizing the GaAs capping layer growth of 1.3 μm InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures
Keywords: A3 نقاط کوانتومی; 81.07.Ta; 81.16.Dn; 81.05.Ea; 78.67.Hc; 68.37.Ps; A3. Metalorganic chemical vapor deposition; A3. Quantum dots; B2. InAs; B2. GaAs; B3. Laser diodes;
Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy
Keywords: A3 نقاط کوانتومی; 78.55.Et; 78.67.HcA1. Impurities; A3. Metalorganic molecular beam epitaxy; A3. Quantum dots; B1. Zinc compounds; B2. Semiconducting II–VI materials
Modification of InAs quantum dot structure during annealing
Keywords: A3 نقاط کوانتومی; 61.10.−i; 68.65.−k; 81.15.HiA1. X-ray diffraction; A3. Molecular-beam epitaxy; A3. Quantum dots; B2. Semiconductor III–V material
Step annealing effects on the structural and optical properties of InAs quantum dots grown on GaAs
Keywords: A3 نقاط کوانتومی; 81.05.Ea; 68.37.Lp; 78.67.HcA1. Annealing effect; A1. Photoluminescence; A1. Transmission electron microscopy; A3. Molecular beam epitaxy; A3. Quantum dots
Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
Keywords: A3 نقاط کوانتومی; 78.47.++p; 78.55.Et; 81.05.Dz; 81.15.HiA1. Growth models; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Cadmium compounds; B2. Semiconducting II–VI materials
Strain relaxation of AlN epilayers for Stranski–Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
Keywords: A3 نقاط کوانتومی; 68.55.Ac; 68.65.HbA1. Nanostructures; A1. Strain relaxation; A3. MOVPE; A3. Quantum dots; B1. AlN; B1. GaN; B1. Nitrides
Stress development during annealing of self-assembled InAs/GaAs quantum dots measured in situ with a cantilever beam setup
Keywords: A3 نقاط کوانتومی; 68.35.-p; 68.65.Hb; 81.07.Ta; 81.10.Aj; A1. Mass transfer; A1. Nanostructures; A1. Ripening; A3. Molecular beam epitaxy; A3. Quantum dots;
Long wavelength and narrow photoluminescence linewidth from InAs quantum dots with GaAs cap layer on GaAs (1Â 0Â 0) substrate
Keywords: A3 نقاط کوانتومی; 61.82.Fk; 68.37.Ps; 68.66.Hb; A1. Atomic force microscopy; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III-V materials;
Influence of the strain on the formation of GaInAs/GaAs quantum structures
Keywords: A3 نقاط کوانتومی; 78.67.He; 68.65.HbA2. Self-organized growth; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Gallium arsenide compounds
A nucleation study of group III-nitride multifunctional nanostructures
Keywords: A3 نقاط کوانتومی; 68.37.Ps; 68.65.−k; 78.30.Fs; 81.05.Ea; 81.15.Gh; 81.16.DnA1. Nanostructures; A3. Metalorganic chemical vapor deposition; A3. Nitrides; A3. Quantum dots; B2. Semiconducting III–V materials
Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition
Keywords: A3 نقاط کوانتومی; A2. MOCVD; A3. Quantum dots; B1. Nanocrystals; B1. ZnO
Ordered InAs QDs using prepatterned substrates by monolithically integrated porous alumina
Keywords: A3 نقاط کوانتومی; 81.05.Ea; 81.15.Hi; 85.40.HpA1. Nanostructures; A1. Patterned substrates; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III-IV materials
Structural characterization of CdSe nanorods
Keywords: A3 نقاط کوانتومی; 61.46.+wB1. Nanorods; A3. Quantum dots; B1. CdSe
Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
Keywords: A3 نقاط کوانتومی; 68.65.Hb; 81.16.Dn; 81.15.Hi; 78.55.CrA3. Molecular beam epitaxy; A3. Quantum dots; B1. InAsN
Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
Keywords: A3 نقاط کوانتومی; 61.16.Ch; 68.55.Jk; 78.55.âm; 81.05.Dz; 81.15.Hi; A1. Atomic force microscopy; A1. Growth models; A3. Molecular beam epitaxy; A3. Quantum dots; B1. Cadmium compounds; B2. Semiconducting II-VI materials;
Magnesium effects on CdSe self-assembled quantum dot formation on ZnxCdyMg1−x−ySe layers
Keywords: A3 نقاط کوانتومی; 81.07.Ta; 81.15.Aa; 81.15.Hi; 81.16.DnA3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting II–VI materials
Near-infrared gain in GaSb quantum dots in Si grown by MBE
Keywords: A3 نقاط کوانتومی; 42.60.Da; 78.55.Ap; 78.55.Cr; 78.66.Db; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting silicon compounds; B3. Silicon-based optical amplifier;
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa
Keywords: A3 نقاط کوانتومی; 68.65.Hb; 68.65.âk; 81.07.Ta; 81.07.âb; A1. Diffusion length; A2. Regrowth; A3. Quantum dots; B1. InAs;
Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures
Keywords: A3 نقاط کوانتومی; 61.72.F; 85.30.V; 81.15.H; A1. Defect; A1. TEM; A3. DWELL; A3. MBE; A3. Quantum dots; B1. GaAs;
Ordered InAs quantum dots on pre-patterned GaAs (0Â 0Â 1) by local oxidation nanolithography
Keywords: A3 نقاط کوانتومی; A1. Nanostructures; A1. Patterned substrates; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting III-V materials;
The effect of In content on high-density InxGa1âxAs quantum dots
Keywords: A3 نقاط کوانتومی; 81.05.Ea; 78.55.Cr; 68.55.Jk; A1. High density; A1. Photoluminescence; A1. Uniformity; A3. Molecular beam epitaxy; A3. Quantum dots; B1. In component;
Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
Keywords: A3 نقاط کوانتومی; 68.65.+g; 78.66.âw; 81.05.Dz; 81.05.Ea; 81.15.Hi; 85.30.Vw; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting materials; B3. Laser diodes;
Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures
Keywords: A3 نقاط کوانتومی; 68.66.Hb; 73.21.La; 78.55.Cr; 78.67.Hc; 81.07.Ta; 81.15.Hi; A1. Nanostructures; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Semiconducting gallium compounds; B3. Laser diodes;
Phosphorus-mediated growth of Ge quantum dots on Si(0Â 0Â 1)
Keywords: A3 نقاط کوانتومی; 68.55.Jk; 81.07.Ta; 81.15.Hi; 81.16.Dn; A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Quantum dots; B2. Silicon germanium semiconductor;
Fabrication of highly ordered nanocrystalline Si:H nanodots for the application of nanodevice arrays
Keywords: A3 نقاط کوانتومی; 81.07.Ta; 81.07.Bc; 81.15.Gh; 81.16.Rf; A1. Nanocrystalline materials; A1. Nanoscale pattern formation; A2. Chemical vapor deposition; A3. Quantum dots;