کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1796701 | 1023752 | 2006 | 6 صفحه PDF | دانلود رایگان |

In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel alumina (NCA) mask and transferring its self-ordering to the underlying GaAs substrate by continuing the anodization process once the GaAs surface is reached. After patterning, the GaAs substrate follows a low temperature process for surface preparation before epitaxial growth for QD formation. As a final result, we observe that the nanoholes act as preferential nucleation sites for InAs QD formation, with a filling factor close to unity, while the QD formation on the surface region between the pattern holes is completely suppressed.
Journal: Journal of Crystal Growth - Volume 294, Issue 2, 4 September 2006, Pages 168–173