The effect of In content on high-density InxGa1−xAs quantum dots

We have successfully grown self-assembled InxGa1−xAs (x=0.44, 0.47, 0.50) quantum dots (QDs) with high density (>1011/cm2) by MBE. The effect of In content on the high-density QD is investigated by atomic force microscopy (AFM) and photoluminescence (PL) spectra. It is found that sample with In-mole-fraction of 0.5 shows small size fluctuation and high PL intensity. The influence of growth temperature on high-density QD is also investigated in our experiment.