Near-infrared gain in GaSb quantum dots in Si grown by MBE

Light amplifying characteristics of GaSb quantum dots embedded in Si were studied. Under visible pulsed laser excitation, a single-pass gain coefficient more than 10 dB cm−1 was obtained for planar waveguide geometry. The gain was found to decrease as the temperature increases, and eventually loss dominates beyond 25 K. All electrical operations of optical amplifier were successful with a gain value of 3 dB cm−1.