Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE

We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer (107cm-2) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution of the InP/GaInP quantum dot layer where large dome shaped structures and small quantum dots could be observed using atomic force microscopy. Using μ-photoluminescence only luminescence from the small high energetic InP-QDs could be recorded with emission linewidths of around 140μeV. Autocorrelation measurements confirmed the zero dimensionality of the InP quantum dots.