InAs/InP QDs with GaxIn1−xAs cap layer by a double-cap procedure using MOVPE selective area growth

GaxIn1−xAs cap layer dependence on self-assembled Stranski-Krastanov (S-K) InAs quantum dots (QDs) was successfully demonstrated using a double-cap procedure and metalorganic vapor phase epitaxy (MOVPE) selective area growth. Selective area growth with a narrow stripe SiO2 mask array pattern was used to control and widen the emission wavelength range of the QDs in a 16-stripe mask array waveguide, and the double-cap procedure was used to improve the uniformity of the QD height. Growth of a 5-layer stacked InAs QD structure was successfully demonstrated using these methods with a Ga0.75In0.25As cap layer.