کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793079 1023664 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Morphology and stress evolution of InAs QD grown and annealed in-situ at high temperature
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Morphology and stress evolution of InAs QD grown and annealed in-situ at high temperature
چکیده انگلیسی
The post growth annealing of InAs quantum dots (QDs) at relatively high temperature was investigated by an in-situ stress cantilever beam setup. For samples annealed at 500∘C, stress accumulated during QD formation relaxes below the value which was built-up during wetting-layer growth. AFM images taken at different annealing stages reveal that QDs ripen first and then dissolve within 10 min of annealing. These observations are explained by a combination of In desorption, especially at the beginning of annealing, and interdiffusion between Ga and In.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 3, 15 January 2010, Pages 447-451
نویسندگان
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