Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique

• MOCVD growth of InAs quantum dots with InAlGaAs double cap layers was studied.
• Surface morphology and optical property of multi-stack InAs/InAlGaAs were improved.
• Strain balancing was favorable for PL intensity enhancement and line-width reduction.

The effects of a double-cap procedure on the optical properties of an InAs/InAlGaAs quantum dots (QDs) system grown by metal-organic chemical vapor deposition (MOCVD) have been investigated by atomic force microscopy (AFM) and room temperature photoluminescence (RT-PL) spectroscopy. An optimized QD growth condition has been achieved, with an areal density of 4.6×1010 cm−2. It was found that the thickness and lattice constant of the high temperature second cap layer (SCL) were crucial for improving the integrated PL intensity and line-width of the 1.55 μm emission from the InAs/InAlGaAs QD system grown on a semi-insulating InP (100) substrate. With fine-tuned SCL thickness and lattice constant, the optical performance of the five-stack QDs was enhanced. The improvements can be attributed to the smooth growth front, observed from the AFM images, and the well-balanced stress engineering.