کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797032 | 1023761 | 2006 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy
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کلمات کلیدی
68.55.Jk81.15.Hi81.05.Dz61.16.Ch78.55.−m - 78.55 مترA1. Growth models - A1 مدل های رشدA1. Atomic force microscopy - A1 میکروسکوپ نیروی اتمیA3. Molecular Beam Epitaxy - A3 اپیتاکسی پرتوهای مولکولیA3. Quantum dots - A3 نقاط کوانتومیB1. Cadmium compounds - B1 ترکیبات کادمیومB2. Semiconducting II–VI materials - B2 مواد نیمه هادی II-VI
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Self-assembled CdSe/ZnSe quantum dots (QDs) were grown at various growth temperatures on GaAs (0 0 1) by molecular beam epitaxy. An optimum growth temperature for CdSe/ZnSe QDs was found to be 260 °C. The Stranski-Krastanow (SK) growth mode was confirmed clearly by atomic force microscopy images. The coherent SK QDs were observed from 2.5 monolayers (MLs). Two types of QDs were found with the CdSe coverage of 3.0 MLs. It was attributed to a growth mode change from the coherent SK growth mode to the ripening growth mode. A schematic diagram of the growth mechanism of self-assembled CdSe QDs was presented. Moreover, the photoluminescence spectra of samples with various thicknesses were investigated. A dramatic change of optical properties confirmed that the QD structure formed with thickness above 2.5 MLs. Finally, the dot size and the density distributions were controlled after growth by in-chamber thermal annealing. For the sample grown at 3.0 MLs, the distribution of dot sizes was controlled from 6.0 to 6.5Ã103nm3 at an annealing temperature of 400 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 338-344
Journal: Journal of Crystal Growth - Volume 286, Issue 2, 15 January 2006, Pages 338-344
نویسندگان
Y.J. Lai, Y.C. Lin, C.P. Fu, C.S. Yang, C.H. Chia, D.S. Chuu, W.K. Chen, M.C. Lee, W.C. Chou, M.C. Kuo, J.S. Wang,