Keywords: 78.55 متر; 81.15.Gh; 78.20.âe; 78.55.âm; 68.37.Lp; Nano-crystalline silicon thin film; Hydrogen diluted SiH4 plasma; ICP-CVD; Photoluminescence; Quantum confinement effect;
مقالات ISI 78.55 متر (ترجمه نشده)
مقالات زیر هنوز به فارسی ترجمه نشده اند.
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Enhanced emission of Er3+ from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers
Keywords: 78.55 متر; 78.20.âe; 78.55.âm; 78.67.Bf; 81.15.Cd; Erbium doping; Silicon rich Al2O3; Silicon nanocrystals;
Dependence of structural and optical properties of sol-gel derived ZnO thin films on sol concentration
Keywords: 78.55 متر; 78.20.a; 78.30.Fs; 78.55.âm; 81.20.Fw; ZnO thin film; Sol-gel method; Sol concentration; Optical band gap; Photoluminescence;
Effects of hydrogen on photoluminescence properties of a-SiNx:H films prepared by VHF-PECVD
Keywords: 78.55 متر; Photoluminescence; Silicon nitride; Hydrogen; Chemical vapor deposition; 78.55.âm; 68.55aj; 67.80.fh; 68.55.Ln; 81.15.Gh;
Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample
Keywords: 78.55 متر; 78.55.âm; 78.67.Bf; 81.07.Bc; Si nanocrystal; Photoluminescence; Multilayer;
Atomic layer deposition coating of ZnO shell for GaN-ZnO core-sheath heteronanowires
Keywords: 78.55 متر; 81.05.Hd; 78.55.âm; Nanostructures; Chemical synthesis; Transmission electron microscopy;
Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers
Keywords: 78.55 متر; 78.20.âe; 78.47.jd; 78.55.âm; 78.55.Et; ZnO/ZnGa2O4; Ultraviolet photoluminescence; Relaxation; Thermal oxidation; Gallium;
Growth and characterization of Cd1âxZnxTe thin films prepared from elemental multilayer deposition
Keywords: 78.55 متر; 78.67.Pt; 81.15.Dj; 78.70.Ck; 78.55.âm; CZT; Multilayer; Vapor deposition; X-ray diffraction; Luminescence;
Modulation of the photoluminescence of Si quantum dots by means of CO2 laser pre-annealing
Keywords: 78.55 متر; 78.55.âm; 73.63.Bd; 78.68.+m; Si quantum dots; Photoluminescence; Laser annealing;
Structural and optical properties of epitaxial ZnO thin films on 4H-SiC (0Â 0Â 0Â 1) substrates prepared by pulsed laser deposition
Keywords: 78.55 متر; 68.55.âa; 81.15.âz; 78.55.âm; Thin films; Crystal growth; X-ray diffraction; Luminescence;
Photoluminescence and charge storage characteristics of silica nanocrystals: The role of stress-induced interface defects
Keywords: 78.55 متر; 61.46.Hk; 78.55.âm; 77.55.+f; Nanocrystals; Stress; Photoluminescence; Metal-insulator-semiconductor devices;
Fabrication and characterization of Au/SiO2 nanocomposite films
Keywords: 78.55 متر; 79.60.Jv; 81.15.Cd; 78.55.âm; Au/SiO2; Nanocomposite film; Sputtering; Photoluminescence;
Structural and optical properties of a-Si1âxCx:H films synthesized by dc magnetron sputtering technique
Keywords: 78.55 متر; 71.20.Nr; 78.20.âe; 78.40.âq; 78.55.âm; Silicon carbide; Sputtering; Amorphous film; Structure; Luminescence; SIMS;
Photoluminescence and Raman analysis of novel ZnO tetrapod and multipod nanostructures
Keywords: 78.55 متر; 78.55.âm; 81.05.Dz; 81.10.Aj; 81.10.Bk; ZnO; Nanostructures; Crystal growth; Photoluminescence;
Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method
Keywords: 78.55 متر; 68.55.âa; 78.55.âm; 73.61.âr; ZnO; MOCVD; Al-N codoped;
Influence of post-annealing on the structure and optical properties of ferromagnetic Zn1âxMnxO film prepared by PECVD technique
Keywords: 78.55 متر; 75.50.Pp; 81.15.Gh; 78.55.âm; Magnetic semiconductor; Plasma-enhanced CVD; Photoluminescence;
Room temperature photoluminescence property of Mo-doped In2O3 thin films
Keywords: 78.55 متر; 68.37.Hk; 78.20.âe; 78.55.âm; Indium oxide; Surface morphology; Photoluminescence;
Characteristics of photoluminescence, thermoluminescence and thermal degradation in Eu-doped BaMgAl10O17 and SrMgAl10O17
Keywords: 78.55 متر; 78.55.âm; 78.55.Hx; BaMgAl10O17; SrMgAl10O17; Thermoluminescence; Photoluminescence; Eu site;
Preparation, characterization and study of optical properties of ZnS nanophosphor
Keywords: 78.55 متر; 61.46.Df; 61.05.cp; 78.55.âm; Nanoparticles; X-ray diffraction; Photoluminescence;
Theoretical analysis of higher-order phonon sidebands in semiconductor luminescence spectra
Keywords: 78.55 متر; Phonon sidebands; Polaron picture; Semiconductor luminescence; 63.20.kd; 71.38.âk; 78.20.Bh; 78.55.âm;
Probing of inversion symmetry site in Eu3+-doped GdPO4 by luminescence study: Concentration and annealing effect
Keywords: 78.55 متر; 78.55.âm; 78.66.âw; Luminescence; Lanthanide ion; Inversion symmetry;
Investigation of porous silicon carbide as a new material for environmental and optoelectronic applications
Keywords: 78.55 متر; 71.20.Nr; 78.20.âe; 78.40.âq; 78.55.âm; Silicon carbide; Electro(chemical); PSC; Gas sensing; Photodiode;
Direct observation of dark exciton states in single carbon nanotubes
Keywords: 78.55 متر; 71.35.Ji; 78.67.Ch; 78.55.âm; Carbon nanotube; Magneto-photoluminescence; Single object spectroscopy; Aharonov-Bohm effect;
Optical study of anthracene molecules doped in fluorene single crystals
Keywords: 78.55 متر; 78.40.âq; 78.40.Me; 78.55.âm; 78.55.Kz; Luminescence; Dimer; Excitation spectrum; Lifetime;
Synthesis and luminescence properties of Tb3+:NaGd(WO4)2 novel green phosphors
Keywords: 78.55 متر; 71.55.âi; 78.55.âm; 78.55.Hx; 78.66.Vs; Hydrothermal synthesis; NaGd(WO4)2; Terbium; Luminescence; Green phosphor;
Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon
Keywords: 78.55 متر; 78.66.Sq; 78.55.Kz; 78.55.âm; 78.30.âj; Porous silicon; Photoluminescence; Dye; Energy transfer; Passivation;
Luminescence properties of red-emitting praseodymium-activated BaTi4O9 phosphor
Keywords: 78.55 متر; 78.55.âm; 78.60.Hk; Photoluminescence; Cathodoluminescence; Intervalence charge transfer;
Luminescence effects of ion-beam bombardment of CdTe surfaces
Keywords: 78.55 متر; 61.80.Jh; 79.20.âm; 78.66.Hf; 78.55.âm; 68.47.Fg; 61.72.ây; CdTe; Ion irradiation; Ion-beam sputtering; Micro-photoluminescence;
Synthesis and optical properties of KZnLa0.99Nd0.01(VO4)2 triple vanadate(V)-New promising laser materials
Keywords: 78.55 متر; 78.55.âm; Synthesis; Absorption spectra; Luminescence spectra; Lifetimes; Nd3+; Vanadates;
Synthesis and luminescent properties of a new red-emitting phosphor for solid-state lighting: Eu0.1GdxLa1.9âxTeO6 (0.02⩽x⩽0.1)
Keywords: 78.55 متر; 78.55.âm; 78.55.Hx; Photoluminescence; Phosphors; Inorganic compounds; Optical properties;
Crystalline and photoluminescence characteristics of YVO4:Sm3+ thin films grown by pulsed laser deposition under oxygen pressure
Keywords: 78.55 متر; 78.20.âe; 78.55.âm; 78.66.âw; YVO4:Sm3+; Pulsed laser deposition (PLD); X-ray diffraction; Atomic force microscopy; Roughness; Oxygen;
Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition
Keywords: 78.55 متر; 81.05.Dz; 73.50.âh; 78.55.âm; 78.70.Ck; ZnO; Thin films; p-type; N-doped;
Luminescence properties of Sn2P2Se6 crystals
Keywords: 78.55 متر; 78.55.âm; 78.66.Li; 71.35.ây; 77.80.âe; 64.70.Rh; Sn2yPb2(1ây)P2S6xSe6(1âx) crystals; Semiconductors; Photoluminescence; Electron-hole recombination; Defect levels;
Broadband (â¼300Â nm) optical gain in the ZAS (ZrO2-Al2O3-SiO2) glass activated by chromium
Keywords: 78.55 متر; 42.70.Ce; 42.70.Hj; 78.20.âe; 78.45.+h; 78.55.âm; Laser materials; Optical gain; Glasses; Cr3+ ions;
Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm
Keywords: 78.55 متر; 73.40.Lq; 78.55.âm; 78.60.Fi; 78.67.Hc; Silicon; Self-assembled islands; Electroluminescence; Photoconductivity; Optocoupler;
Yellow-emitting colloidal suspensions of silicon nanocrystals: Fabrication technology, luminescence performance and application prospects
Keywords: 78.55 متر; 78.55.âm; 78.67.ân; 78.55.Ap; Silicon nanocrystals; Colloidal solution; Photoluminescence;
Effect of thermal annealing on structure and photoluminescence properties of silicon-rich silicon oxides
Keywords: 78.55 متر; 78.67.ân; 78.55.âm; 81.07.âb; Si nanocrystals; Photoluminescence; Percolation;
Erbium-doped silicon nanocrystals in silicon/silicon nitride superlattice structures: Light emission and energy transfer
Keywords: 78.55 متر; 78.67.Bf; 78.55.âm; 77.84.Bw; Nanocrystals; Light emission; Nitride materials;
Structural and optical characteristics of Er-doped SRSO layers deposited by the confocal sputtering technique
Keywords: 78.55 متر; 78.55.âm; 78.67.Bf; 81.15.Cd; Reactive magnetron sputtering; Erbium; Si nanocluster; Photoluminescence;
Spatial distribution of defect in ZnO nanodisks
Keywords: 78.55 متر; 78.55.âm; 78.30.âj; 81.07.âb; Raman mapping; Photoluminescence mapping; Defect distribution;
Growth and characterization of m-plane GaN-based layers on LiAlO2 (1Â 0Â 0) grown by MOVPE
Keywords: 78.55 متر; 78.55.âm; 78.66.Fd; 78.67.De; A1. Characterization; A1. High resolution XRD; A3. MOVPE; A3. Quantum wells; B1. Nitrides;
Optical properties of Cd1âxZnxTe thin films fabricated through sputtering of compound semiconductors
Keywords: 78.55 متر; 78.67.Pt; 81.15.Cd; 78.55.âm; CZT; Multilayer; Sputtering; Photoluminescence; Photoresponse;
Formation and removal of multi-layered fluorescence patterns in gold-ion doped glass
Keywords: 78.55 متر; 61.80.Ba; 78.66 Jg; 78.55.âm; Au; CO2 laser annealing; Femtosecond laser; Glass;
Rubidium metavanadate formation at room temperature under vacuum ultraviolet irradiation from metal-organic compositions
Keywords: 78.55 متر; 68.55.âa; 68.55.Aâ; 78.55.âm; RbVO3; Phosphor film; Vacuum ultraviolet; Room temperature fabrication;
Temperature-dependent photoluminescence spectra of Er-Tm-codoped Al2O3 thin film
Keywords: 78.55 متر; 78.20.âe; 78.55.âm; 82.20.âRp; 81.15.Cd; Rare earth doping; Al2O3 thin film; Photoluminescence; Energy transfer;
A combined approach to fabricating Si nanocrystals with high photoluminescence intensity
Keywords: 78.55 متر; 78.55.âm; 73.63.Bd; 78.68.+m; Si nanocrystal; Photoluminescence; Photoluminescence efficiency;
Influence of hydrogenation on the structure and visible photoluminescence of germanium oxide thin films
Keywords: 78.55 متر; 77.55.+f; 78.55.âm; 78.30.âj; 81.15.Ef; Germanium oxide; Thin films; Photoluminescence; Hydrogenation; Reactive evaporation;
Highly efficient transparent Zn2SiO4:Mn2+ phosphor film on quartz glass
Keywords: 78.55 متر; 78.20.Ci; 78.55.âm; 78.66.âw; A. Zn2SiO4:Mn2+ phosphor film; B. Sputtering; B. Thermal diffusion; E. Luminescence;
Luminescence of Pr3+ doped K2LaCl5 microcrystals encapsulated in KCl host
Keywords: 78.55 متر; 71.35.ây; 71.55.âi; 78.55.âm; 78.55.Fv; Praseodymium; Luminescence; Microcrystals;
Synthesis and photoluminescent properties of Gd3O4Br:Er3+ phosphors prepared by solid-state reaction method
Keywords: 78.55 متر; 78.55.âm; Gd3O4Br:Er3+; Raman spectra; Upconversion;