Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

► It presents a systematic study of PL emission of Si nanocrystals from Si/SiO multilayered structures. ► The result shows that the PL intensity is determined by both the amount of doping of Si and the distribution of Si as well. ► Also it shows that the PL intensity of Si nanocrystals from the multilayered structure can be significantly greater than the sample prepared by co-evaporation of Si and SiO at the same optimized Si to O ratio.