کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1547427 | 997635 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
The effect of structure parameters on the electroluminescence and photoconductivity of multilayer p-i-n structures with self-assembled Ge(Si)/Si(0 0 1) islands has been studied. The highest intensity of the room-temperature electroluminescence in the wavelength range 1.3-1.55 μm has been observed for the islands grown at 600 °C. The observed growth of the electroluminescence signal from the islands with an increase of the Si space layer thickness is associated with a decrease of elastic strain in the structure with thicker space layers. The highest external quantum efficiency of the electroluminescence from the islands in the wavelength range 1.3-1.55 μm amounts to 0.01% at room temperature. The same diode structures with Ge(Si)/Si(0 0 1) islands have demonstrated room-temperature photoconductivity signal in the wavelength range 1.3-1.55 μm. The observed overlap of the electroluminescence and photoconductivity spectra obtained for the same structures with Ge(Si) islands makes these structures a promising material for fabrication of Si-based optocoupler.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 6, May 2009, Pages 935-938
Journal: Physica E: Low-dimensional Systems and Nanostructures - Volume 41, Issue 6, May 2009, Pages 935-938
نویسندگان
D.N. Lobanov, A.V. Novikov, K.E. Kudryavtsev, A.N. Yablonskiy, A.V. Antonov, Yu.N. Drozdov, D.V. Shengurov, V.B. Shmagin, Z.F. Krasilnik, N.D. Zakharov, P. Werner,