کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5364878 | 1388321 | 2009 | 4 صفحه PDF | دانلود رایگان |

This work demonstrates that by combining three methods with different mechanisms to enhance the photoluminescence (PL) intensity of Si nanocrystals embedded in SiO2 (or Si-nc:SiO2), a promising material for developing Si light sources, a very high PL intensity can be achieved. A 30-layered sample of Si-nc:SiO2/SiO2 was prepared by alternatively evaporating SiO and SiO2 onto a Si(1 0 0) substrate followed by thermal annealing at 1100 °C. This multilayered sample possessed a fairly high PL efficiency of 14% as measured by Greenham's method, which was 44 times that of a single-layered one for the same amount of excess Si content. Based on this multilayered sample, treatments of CeF3 doping and hydrogen passivation were subsequently applied, and a high PL intensity which was 167 times that of a single-layered one for the same amount of excess Si content was achieved.
Journal: Applied Surface Science - Volume 255, Issue 6, 1 January 2009, Pages 3833-3836