Enhanced emission of Er3+ from alternately Er doped Si-rich Al2O3 multilayer film with Si nanocrystals as broadband sensitizers

► The intensity of Er3+ PL from the multilayer film is much higher than that of the monolayer film. ► The enhancement of Er3+ PL might be due to the energy transfer from Si nanocrystals to Er3+ ions ► A nonmonotonic temperature dependence from the Er:Si:Al2O3 multilayer film. ► Good perspectives for the development of Er-doped waveguide amplifiers operating at high temperature.