کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362543 | 1388289 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature effect on the electrical, structural and optical properties of N-doped ZnO films by plasma-free metal organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
N-doped p-type ZnO films were grown by plasma-free metal-organic chemical vapor deposition (MOCVD). The effect of substrate temperature on the electrical, optical, and structural properties of the N-doped ZnO films was investigated by Hall-effect, photoluminescence, X-ray diffraction measurements. The electrical properties of the films were extremely sensitive to the substrate temperature and the conduction type could be reversed in a narrow range from 380 °C to 420 °C. Based on X-ray photoelectron spectroscopy, a high compensation effect in the N-doped ZnO films grown by plasma-free MOCVD was suggested to explain the temperature-dependent phenomenon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6201-6204
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6201-6204
نویسندگان
Ying Zhu, Shisheng Lin, Yinzhu Zhang, Zhizhen Ye, Yangfan Lu, Jianguo Lu, Binghui Zhao,