کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829841 | 1524499 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report MBE regrowth of InAs quantum dots on GaAs circular mesas, prepared by optical lithography. Because of better strain relaxation, the possibility of quantum dots growth near the lithographic edge is high. Under controlled growth conditions, quantum dots appear only close to the edge. Under these conditions, we discuss the possible influence of crystal orientation to the quantum dots formation, as well as geometrical factors, such as the lateral size of the mesa, and the depth and steepness of the lithographic step. With the full control of the quantum dots formation, we measured the photoluminescence spectrum of the buried dots, as well as the real space image from a CCD camera. The results indicate that quantum dots only form at the edge. Besides the physical location, all the other parameters are quite similar to self-assembled quantum dots formed on planar surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 342-345
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 342-345
نویسندگان
Zhigang Xie, Fang Wei, Hui Cao, Glenn S. Solomon,