کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829841 1524499 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Regrowth dynamics of InAs quantum dots on the GaAs circular mesa
چکیده انگلیسی
We report MBE regrowth of InAs quantum dots on GaAs circular mesas, prepared by optical lithography. Because of better strain relaxation, the possibility of quantum dots growth near the lithographic edge is high. Under controlled growth conditions, quantum dots appear only close to the edge. Under these conditions, we discuss the possible influence of crystal orientation to the quantum dots formation, as well as geometrical factors, such as the lateral size of the mesa, and the depth and steepness of the lithographic step. With the full control of the quantum dots formation, we measured the photoluminescence spectrum of the buried dots, as well as the real space image from a CCD camera. The results indicate that quantum dots only form at the edge. Besides the physical location, all the other parameters are quite similar to self-assembled quantum dots formed on planar surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1–4, 1 May 2005, Pages 342-345
نویسندگان
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