کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1790380 1524428 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates
چکیده انگلیسی
We perform structural and optical investigations of GaSb/GaAs quantum dots (QDs) grown on Ge (001) substrates by molecular beam epitaxy. Anti-phase domains (APDs) of GaAs are distributed on Ge substrate after the growth of GaAs due to the growth nature of III-V compound on group IV semiconductors having polar and non-polar behaviors. The APDs affect the QD growth as demonstrated by the growth of conventional InAs QDs on this surface. For GaSb QDs, the GaSb layer is grown on GaAs APD surface and compared with the GaSb layer on conventional (001) GaAs surface. Self-assembled QDs are formed on both surfaces but structural analysis reveals evidence of shape and size differences, which is attributed to the influence of the initial surface. Photoluminescence of GaSb/GaAs QDs grown on both Ge and GaAs substrates is studied. Emission from GaSb/GaAs QDs on Ge substrate can be detected till near room temperature (270 K).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 401, 1 September 2014, Pages 441-444
نویسندگان
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