کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797210 | 1023773 | 2006 | 5 صفحه PDF | دانلود رایگان |

The influence of the strain on the dot morphology of GaInAs quantum dots has been investigated. The strain was varied by the In content in GaInAs/GaAs quantum dots from 60% down to 30% by keeping the emission wavelength at about 900 nm at 10 K. Spectral properties are compared with morphological results determined by scanning electron and scanning transmission electron microscopy confirming a change of the dot geometry from circular to elongated shapes during an overgrowth process. These lowly strained quantum dot layers with enlarged dot sizes exhibit a reduced dot density of 6–9×109 cm−2 and a strongly enhanced oscillator strength, which make them very interesting for single quantum dot and cavity quantum electrodynamic experiments as well as for applications like single photon emitters.
Journal: Journal of Crystal Growth - Volume 286, Issue 1, 1 January 2006, Pages 6–10