کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797210 1023773 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of the strain on the formation of GaInAs/GaAs quantum structures
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influence of the strain on the formation of GaInAs/GaAs quantum structures
چکیده انگلیسی

The influence of the strain on the dot morphology of GaInAs quantum dots has been investigated. The strain was varied by the In content in GaInAs/GaAs quantum dots from 60% down to 30% by keeping the emission wavelength at about 900 nm at 10 K. Spectral properties are compared with morphological results determined by scanning electron and scanning transmission electron microscopy confirming a change of the dot geometry from circular to elongated shapes during an overgrowth process. These lowly strained quantum dot layers with enlarged dot sizes exhibit a reduced dot density of 6–9×109 cm−2 and a strongly enhanced oscillator strength, which make them very interesting for single quantum dot and cavity quantum electrodynamic experiments as well as for applications like single photon emitters.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 286, Issue 1, 1 January 2006, Pages 6–10
نویسندگان
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