Growth and properties of ZnO thin film on β-Ga2O3 (1 0 0) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the β-Ga2O3 (1 0 0) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Ω cm at room temperature. Thus, β-Ga2O3 (1 0 0) substrate is shown to be a suitable substrate for fabricating ZnO film.