کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797424 | 1023789 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
SIMS-depth profile and microstructure studies of Ti-diffused Mg-doped near-stoichiometric lithium niobate waveguide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: SIMS-depth profile and microstructure studies of Ti-diffused Mg-doped near-stoichiometric lithium niobate waveguide SIMS-depth profile and microstructure studies of Ti-diffused Mg-doped near-stoichiometric lithium niobate waveguide](/preview/png/1797424.png)
چکیده انگلیسی
Ti-diffused planer waveguides have been fabricated on pure and Mg-doped near stoichiometric lithium niobate (SLN). Secondary ion mass spectroscopy method was applied to study the Ti diffusion in 1Â mol% Mg-doped Z-cut SLN crystal. 100Â nm Ti film has been deposited on LN substrate by e-beam evaporation at room temperature. Diffusion constant value for Mg-doped SLN is lower (1.84Ã10â13Â cmâ2/s) than that of pure SLN. Mg-doped CLN also possesses low diffusion constant value of 1.27Ã10â13Â cmâ2/s due to higher doping concentration of Mg (5Â mol%). AFM topographic observation reveals that Mg-doped SLN shows lower surface roughness than Mg-doped CLN. The roughness (peak to valley) of the Ti-diffused Mg:SLN is 20Â nm compared to 62Â nm for the congruent LN waveguide. These features make Mg:SLN highly attractive for the fabrication of efficient waveguides.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 472-477
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 472-477
نویسندگان
R. Mohan Kumar, F. Yamamoto, J. Ichikawa, H. Ryoken, I. Sakaguchi, X. Liu, M. Nakamura, K. Terabe, S. Takekawa, H. Haneda, K. Kitamura,