کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489395 | 1524359 | 2017 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate Strain relaxation induced surface morphology of heterogeneous GaInNAs layers grown on GaAs substrate](/preview/png/5489395.png)
چکیده انگلیسی
The partially-relaxed heterogeneous GaInNAs layers grown on GaAs substrate by atmospheric pressure vapor phase epitaxy (AP-MOVPE) were investigated by transmission electron microscopy (TEM) and atomic force microscopy (AFM). The planar-view TEM image shows a regular 2D network of misfit dislocations oriented in two orthogonal ã1Â 1Â 0ã crystallographic directions at the (0Â 0Â 1) layer interface. Moreover, the cross-sectional view TEM image reveals InAs-rich and V-shaped precipitates in the near surface region of the GaInNAs epitaxial layer. The resultant undulating surface morphology, known as a cross-hatch pattern, is formed as observed by AFM. The numerical analysis of the AFM image of the GaInNAs layer surface with the well-defined cross-hatch morphology enabled us to determine a lower bound of actual density of misfit dislocations. However, a close correspondence between the asymmetric distribution of interfacial misfit dislocations and undulating surface morphology is observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 108-112
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 108-112
نویسندگان
Å. Gelczuk, G. Jóźwiak, M. MoczaÅa, P. DÅużewski, M. DÄ
browska-Szata, T.P. Gotszalk,