High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
Keywords: B1 آنتیبادیدها; 81.15Hi; 81.05.Ea; 78.55.-m; 85.30.TvA3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III–V materials; B3. High electron mobility transistors