BSb films: Synthesis and characterization

BSb films were deposited onto fused silica substrates by coevaporating B and Sb from appropriate boats. Optical studies indicated an indirect band gap of ∼0.59 eV. The films thus prepared were characterized by measuring X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) studies. XPS studies indicated the ratio of B:Sb ∼1. XRD indicated the reflections from (1 0 1), (1 1 1), (1 1 2), (3 3 0), (3 3 1) and (3 2 3) planes of zinc blende BSb. FTIR spectra indicated the peaks for B–B, B–O, B–Sb vibration modes. A strong peak located at ∼151 cm−1 for B–Sb modes dominated the Raman spectra. Electrical resistivity was measured for B–Sb films in the temperature range of 100–353 K. Electron transport process was seen to be governed by Mott's hopping when complete temperature dependence of the conductivity is considered.