کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829806 | 1524499 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
InAs sandwiched between AlGaAsSb insulating layers lattice matched to InAs were grown by molecular beam epitaxy and the InAs thickness dependence of the electrical and temperature properties were studied. The results of this study show that the AlGaAsSb insulating layers almost eliminated a large lattice mismatch effect at InAs/GaAs hetero-interface and have increased electron mobility of InAs layer. It was also shown that the electron mobility and sheet electron density of InAs layer have a substantial thickness dependence. The temperature dependence of the electron mobility and sheet electron densities also discussed with respect to InAs thickness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 162-166
Journal: Journal of Crystal Growth - Volume 278, Issues 1â4, 1 May 2005, Pages 162-166
نویسندگان
Ichiro Shibasaki, Hirotaka Geka, Atsushi Okamoto, Yosihiko Shibata,