کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829387 | 1524490 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Initial growth stage of GaSb on Si(0Â 0Â 1) substrates with AlSb initiation layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Although we recently found that a high-quality GaSb film can be grown on Si substrate by using an AlSb initiation layer, the growth mechanism, especially the effects of AlSb initiation layer, was not clear. Therefore, we investigated the initial growth stage of GaSb on Si(0Â 0Â 1) substrates with AlSb initiation layers by atomic force microscopy. When small AlSb islands were formed on the Si substrate before the growth of GaSb, two-dimensional GaSb growth occurred. In contrast, without the growth of AlSb small islands, large GaSb islands were formed on the Si substrate. Therefore, the AlSb islands played an important role in preventing excessive surface diffusion of Ga atoms on the Si surface and promoting two-dimensional growth of GaSb.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 283, Issues 3â4, 1 October 2005, Pages 297-302
Journal: Journal of Crystal Growth - Volume 283, Issues 3â4, 1 October 2005, Pages 297-302
نویسندگان
Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta, Naoki Ohtani,