کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789777 | 1524393 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices Quantitative study of the effect of deposition temperature on antimony incorporation in InAs/InAsSb superlattices](/preview/png/1789777.png)
چکیده انگلیسی
InAs/InAsSb superlattices (SLs) are being actively explored for infrared detector applications owing to their superior carrier lifetimes. However, antimony (Sb) segregation during growth can alter the properties of the grown material. In this study, using X-ray energy dispersive spectrometry, authors quantify the compositional profile of individual layers and establish epitaxial parameters for high-quality InAs/InAsSb SL materials. Epitaxial conditions are determined for a nominal 7.7 nm InAs/3.5 nm InAs0.7Sb0.3 SL structure tailored for an approximately 6 μm response at 150 K. Since the growth of mixed anion alloys is complicated by the potential reaction of As2 with Sb surfaces, authors varied the deposition temperature (Tg) in order to control As2 surface reactions on Sb surfaces. Authors find that Sb incorporation is suppressed by 21%, with the increase of Tg from 395 to 440 °C. This incorporation likely stems from Sb surface segregation during InAsSb layer growth that is driven by the As-Sb exchange mechanism, which can lead to significant compositional and dimensional deviations from the intended design.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 436, 15 February 2016, Pages 134-137
Journal: Journal of Crystal Growth - Volume 436, 15 February 2016, Pages 134-137
نویسندگان
H.J. Haugan, K. Mahalingam, F. Szmulowicz, G.J. Brown,