Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxy

We describe the realization of buried-heterostructure strain-compensated quantum-cascade lasers that incorporate a very high degree of internal strain and are grown on InP substrates using gas-source molecular-beam epitaxy (GSMBE). The active region of the lasers contains AlAs layers up to 1.6 nm thick with 3.7% tensile strain; restricting any post-growth processing to temperatures below 600 °C to avoid relaxation. We demonstrate that buried-heterostructure devices can be realized by using GSMBE to over-grow the etched laser ridge with insulating InP:Fe at temperatures low enough to preserve the crystal quality of the strain-compensated active region. Two distinct growth techniques are described, both leading to successful device realization: selective regrowth at 550 °C and non-selective regrowth at 470 °C. The resulting buried-heterostructure lasers are compared to a reference laser from the same wafer, but with SiO2 insulation; all three have very similar threshold current densities, operational thermal stability, and waveguide losses.

► Semi-insulating InP:Fe is grown by gas-source molecular-beam epitaxy.
► Buried-heterostructure strain-compensated quantum-cascade lasers are fabricated.
► Laser threshold and waveguide loss are consistent with those of reference structure.