Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

► We examine minority carrier lifetimes in type II strained layer superlattices. ► Effect of interfaces found to be of secondary importance. ► Lifetimes in InAs and GaSb are found to improve with growth temperature. ► In general lifetimes appear to be reduced by the presence of GaSb. ► Native defects are proposed as the origin of the recombination centers.