کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794262 1023693 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InPIn0.53Ga0.47As/In0.52Al0.48As/InP
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Terahertz quantum cascade lasers based on In0.53Ga0.47As/In0.52Al0.48As/InPIn0.53Ga0.47As/In0.52Al0.48As/InP
چکیده انگلیسی

Continuous wave and above liquid-nitrogen temperature operation of MBE grown terahertz quantum cascade lasers based on the In0.53Ga0.47As/In0.52Al0.48As/InPIn0.53Ga0.47As/In0.52Al0.48As/InP material system are reported. Samples investigated used a bound-to-continuum active region design with a single or double quantum well injector at the wavelength λ≈80μm. A precise flux calibration and a modified injector design resulted in a maximum operating temperature in continuous wave and pulsed mode of 63 and 87 K and an optical output power of 4 mW at 10 K.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1939–1943
نویسندگان
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