LPE growth and characterization of InAs1−xNx films

• InAs1−xNx films were grown on InAs substrates by liquid phase epitaxy.
• One third of InN powder is placed under the initial melt homogeneously.
• The N content of InAs1−xNx film is up to 0.66%.

A series of InAs1−xNx films have been successfully grown on (100) oriented InAs substrates by liquid phase epitaxy technique. Samples with different nitrogen contents have been analyzed by high-resolution x-ray diffraction measurement, which confirms the incorporation of N in the epilayers. N-related modes are detected in the Raman spectra of InAs1−xNx epilayers. The fundamental absorption edges of InAs1−xNx films obtained by Fourier transform infrared transmission spectroscopy exhibit a red-shift compared with that of InAs homoepilayer.