LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate

High quality InAs0.85Sb0.15 film has been successfully grown on (1 0 0) InAs substrate by liquid phase epitaxy using InAs0.93Sb0.07 buffer layer. The microstructure and morphologies of the film were characterized by high-resolution X-ray diffraction, scanning electronic microscopy, optical microscopy, atomic force microscopy, and high-resolution transmission electron microscopy. These results show that the high quality film with mirror-like surface was obtained. The optical properties were investigated by photoluminescence and the Raman spectra. The peak position of photoluminescence spectrum for the film is about 0.35 eV at 77 K. In addition to the reported single-mode phonon behavior, the local vibration mode associated with Sb atoms was also observed in the Raman spectra.

► InAs0.85Sb0.15 film has been grown by liquid phase epitaxy in simpler way.
► The microstructure and morphologies of the film were characterized.
► Quality of the film was improved due to lower growth temperature and buffer layer.
► The Raman local vibration mode associated with Sb atoms was firstly observed.