کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793705 1023681 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering
چکیده انگلیسی

Mg4Ta2O9 thin films were deposited on p-type Si(1 0 0) substrates by reactive RF magnetron sputtering with various RF powers and deposition temperatures. The crystallinity and electrical properties of the films were investigated. The microstructure and surface morphology characteristics analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were related to deposition parameters, such as RF power (100, 200, and 300 W) and deposition temperature (250, 350, and 450 °C). Highly oriented Mg4Ta2O9 (1 0 4) and (1 1 6) perpendicular to the substrate surface were identified at an RF power of 300 W and a deposition temperature of 450 °C. The electrical properties were also measured using capacitance–voltage (C–V) and current–voltage (I–V) measurements on a metal–insulator–semiconductor (MIS) capacitor structure. The leakage current increased with increasing RF power and substrate temperature. At an RF power of 300 W, a substrate temperature of 450 °C, a deposition pressure of 5 mTorr, and an Ar/O2 ratio of 100/0, the Mg4Ta2O9 films with 4.82 μm thickness possess a dielectric constant of 13.2 (f=10 MHz) and a leakage current density of 1.59×10−9 A/mm2 at 5 V.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 627–633
نویسندگان
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