کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793139 1023666 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate
چکیده انگلیسی

BiFeO3/LaNiO3 (BFO/LNO) heterostructure films are fabricated directly on Si (1 0 0) substrate. The LaNiO3 layer, which is prepared by chemical solution deposition, is used both as the seed layer to improve the quality of BiFeO3 layer, and as the bottom electrode for the electrical measurement. The BiFeO3 layer, which is fabricated by pulsed laser deposition, presents compact microstructure with grain size about 100 nm. Saturated hysteresis loops of polarization vs. applied voltage have been measured at the frequency of 1 kHz. The value of remnant polarization is about 40 μC/cm2. The frequency dependence of capacitance and loss tangent of the heterostructure is also studied. All the results of the electrical measurements indicate that the effect of leakage current has been suppressed in the BFO/LNO heterostructure. The results are significative for the application of BiFeO3 films in microelectronic devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 4, 1 February 2010, Pages 617–620
نویسندگان
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