کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793121 1023666 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of (In1−xAlx)2S3 thin films grown by co-evaporation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Characterization of (In1−xAlx)2S3 thin films grown by co-evaporation
چکیده انگلیسی

In this paper, it is shown that (In1−xAlx)2S3 thin films can be grown through the co-evaporation of elemental indium, aluminum and sulfur. It is nevertheless observed that the introduction of aluminum within the indium sulfide thin films hinders the crystallites size and even yields almost amorphous films when x is 0.2. The investigations of the optical properties of the films reveal that contrary to what could be expected, the band gap increase is low; the highest values measured do not exceed 2.2 eV. However, as suggested by X-ray photoelectron spectroscopy measurements, such widening most probably affects the lower conduction band states.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 4, 1 February 2010, Pages 502–506
نویسندگان
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