کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468293 | 1518930 | 2017 | 46 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics](/preview/png/5468293.png)
چکیده انگلیسی
The impacts of thermal annealing on the interfacial reactions and bonding structures between the tungsten metal gate and CeO2/La2O3 stacked dielectrics were investigated by x-ray photoelectron spectroscopy (XPS) measurements. We found that the amount of W oxidation increases with the depth closer to the CeO2 layer. In addition, as the annealing temperature increases to 600 °C, out-diffusion of Ce and La atoms to the bulk W, leading to the formation of Ce-O-W or La-O-W phases at the W/CeO2-La2O3 transition layer, were observed. A quantitative analysis on the oxidation states of tungsten (i. e. Wn+, with n = 0, 2, 4, 5, and 6) were conducted by the Gaussian decomposition method. Results show that in the as-deposited sample the metallic W0 (about 60%) is the majority content state. Other oxidation states such as W2+, W4+, W6+, and W5+ are still noticeable. With 600 °C annealing, the amount of W6+ state dramatically increases to about 16% and it accompanies with the decrease of CeO2 phase. These observations indicate that the high temperature annealing would not only lead to a significant oxidation of tungsten film, but also promote the material intermixing at W/CeO2 interface. The mechanisms of interfacial reactions and their effect on EOT were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 140, June 2017, Pages 7-13
Journal: Vacuum - Volume 140, June 2017, Pages 7-13
نویسندگان
Jieqiong Zhang, Hei Wong, Kuniyuki Kakushima, Hiroshi Iwai,