Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability

Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 72, May 2017, Pages 98-102

Giyoun Roh, Hyeokjin Kim, Cheolgyu Kim, Dongwoo Kim, Bongkoo Kang,