Characterization of high-k dielectrics using MeV elastic scattering of He ions

We present a systematic comparison of two distinct ion-beam based methods for composition analysis of nanometer oxide films: ion-beam channeling and elastic scattering using nuclear resonances, both at MeV energies. Thin films of the technologically highly relevant high-k dielectrics HfO2 and HfAlO are characterized in the present study, with the additional aim of obtaining a better quantification of the Al content for the latter system. We show that both employed ion scattering methods enable a quantitative determination of the oxygen concentrations with typical uncertainties of about 5–10% in the oxygen fraction. The influence of various kinds of systematic inaccuracies in the evaluation procedure are discussed.