High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

- Two-step high-pressure sputtering for Gd2O3 deposition on InP substrates.
- Working MIS devices for all sputtering and plasma oxidation conditions.
- High capacitance (CET of 2.4 nm) with moderate leakage (under 10−3 A cm−2 at a gate voltage of 1 V).