Modifications of structural, chemical, and electrical characteristics of Er2O3/Si interface under Co-60 gamma irradiation

This paper reports the influences of gamma radiation on the structural, electrical, and chemical characteristics of erbium oxide (Er2O3) thin films and the possible mechanisms underlying these irradiation-induced effects. The crystallographic and morphological modifications under gamma irradiation were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively, while radiation influences on electrochemical characteristics were analyzed by X-ray photoelectron spectroscopy (XPS). Furthermore, changes in electrical characteristics were analyzed on the basis of capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. The XRD results demonstrated that small atomic displacement was observed and that the grain size of the nanostructure slightly increased. Improvements in surface roughness were observed in AFM measurements. The observed variations in the XRD and AFM measurements can be attributed to the radiation-induced local heating and microscopic atomic mobility. In addition, the XPS analysis obviously demonstrated that the oxygen vacancies increased with irradiation dose because of the breaking of Er2O3 and ErxOy bonds. Significant influences of the generated oxygen vacancies on the electrical measurements were observed, and the radiation-induced hole traps, which caused large flat band shifts, can be attributed to the generated oxygen vacancies. The results show that radiation does not degrade the physical characteristics significantly, but the generation of oxygen vacancies considerably increases the electrical sensitivity of the Er2O3 dielectric.