Interface phonon modes of dual-gate MOSFET system

• Unwanted interface phonon potentials are reduced in the dual-gate MOSFET by about a factor of four.
• The secular equation and the normalization condition are derived here analytically for the first time.
• The interface phonon mode potential in dual-gate MOSFET system reduced significantly.

Herein, analytical expressions are derived for the interface phonon modes of the dual-gate MOSFET system. These analytical results are essential for studies of phonon scattering in MOSFET structures which will affect the performance of the device. We consider selected cubic systems within the framework of macroscopic dielectric continuum model. A principal finding of this paper is that the normally-dominant and unwanted carrier scattering caused by interface phonon interactions can be strongly suppressed through the appropriate placement of the two gates.