Analytical modeling and simulation of multigate FinFET devices and the impact of high-k dielectrics on short channel effects (SCEs)

• Analytical model of channel potential is derived for undoped doped (lightly) channel GAA, TG and DG FinFET.
• Theoretical results are in good agreement with numerical simulated data.
• ATLAS simulation data are used for the verification of theoretical results.
• Impact of gate-stack (GS) high-k gate dielectrics on short channel effects (SCEs).
• Simulation based electrical performance parameters comparison of DG, TG, and GAA FinFET with Tfin variations.

The Fin shaped Field Effect Transistor (FinFET), is a leading contender in modern microelectronics. Its unique structure allows to scale the device at sub-nanometer regime and to mimic the electrical characteristics of a MOSFET. A three-dimensional (3D) analytical modeling of SOI multigate (Gate-All-Around (GAA), Triple-Gate (TG) and Double-Gate (DG)) FinFETs and relative comparison among them is presented. The channel potential is derived from 3D Poisson’s equation of each FinFET using the superposition method with appropriate boundary conditions, effective dimensions. The analytically modeled data are in good agreement with numerically simulated data of all the structures and the channel potential of GAA FinFET demonstrates the ameliorated electrostatic control over the other two structures. The impact of gate-stack (GS) high-k gate dielectrics on short channel effects (SCEs) of all aforementioned devices has been investigated with fin thickness (Tfin) variations. The GS C4 configuration reveals a significant suppression of SCEs in all FinFETs. It has been noticed that among the stated devices, the GAA FinFET with C4 configuration manifests the alleviated subthreshold swing (SS), drain induced barrier lowering (DIBL). In overall comparison, the SCEs are reasonably controlled with GS high-k gate dielectrics. The numerical simulations were performed on 3D ATLAS™.