کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359677 | 1503681 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850 °C, 900 °C, 950 °C, and 1000 °C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175 °C for different durations. The Fowler-Nordheim tunneling exhibits between 2 and 4 MV cmâ1, respectively, and then the breakdown occurs at around 6-8 MV cmâ1. The wet oxidation at 950 °C provides the lowest interface trap density of 4-6 Ã 1011 cmâ2 eVâ1 at 0.24 eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5 MV cmâ1, mainly due to damage caused by ion implantation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 282, 1 October 2013, Pages 126-132
Journal: Applied Surface Science - Volume 282, 1 October 2013, Pages 126-132
نویسندگان
Kung-Yen Lee, Yu-Hao Chang, Yan-Hao Huang, Shuen-De Wu, Cheng Yueh Chung, Chih-Fang Huang, Tai-Chou Lee,