Analysis of relaxation time and density of interface trap on perylene-diimide (PDI)/p-Si (100) Schottky diodes

Perylene-dimide (PDI) thin film on p-Si (100) has been prepared by the spin coating. The interface trap density (Dit)(Dit) and relaxation time (τ) properties of the prepared structure have been determined in the various frequency ranges (1 kHz–1 MHz) and the voltage ranges (0.0 V–700 mV). A peak is observed in Git/ωGit/ω vs. log(f) curves between 0.0 V and 700 mV. This peak confirms the existence of interface state and its relaxation time. The DitDit was observed to increase while an decrease was seen in τ   with the increasing measured voltage for the structure. The values of DitDit of the heterojunction lie from 1.57×1012 eV−1 cm−2 to 5.79×1012 eV−1 cm−2 while the values of τ range from 4.38×10−7 s to 8.73×10−6 s in the measured voltages.