Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT

Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 145-149

A. Gaur, Y. Balaji, D. Lin, C. Adelmann, J. Van Houdt, M. Heyns, D. Mocuta, I. Radu,